Kaja H. Hiorth

1 Introduction Amorphous oxide films play an important role in many technologies as dielectrics in field effect transistors and memories ( SiO 2 ${\rm SiO}_2$ , HfO 2 ${\rm HfO}_2$ , Al 2 O 3 ${\rm Al}_2{\rm O}_3$ , for example) and semiconductors (indium gallium zinc oxide (IGZO), Ga 2 O 3 ${\rm Ga}_2{\rm O}_3$ , and others) in thin-film transistors [1-4]. Their performance in devices is affected by various degradation effects attributed to pre-existing and generated defects.