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Kenta Matsubara

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Articles

Computational Study for Structures and Electronic Properties of (RhAl)2O3 and (RhGa)2O3 Alloys for Optimal p‐Type Heterostructures in Group‐III Sesquioxides

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By Kenta Matsubara, Toru Akiyama, Takahiro Kawamura
| Wiley Online Library Verified
1 Introduction Ga2O3 is one of group-III sesquioxides and has a wide bandgap (≈4.8 eV), which is wider than those of Si and GaN, enabling operation in high temperature environments. In addition, the extremely high breakdown voltage in Ga2O3 allows for fabrication of high-voltage devices.[1, 2] The ability to operate at high-temperature and high-voltage environment has led to applications in a variety of fields such as inverters for electric vehicles, railways, and power grids.
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