Kevin-P. Gradwohl

Abstract Raman spectroscopy enables the non-destructive characterization of chemical composition, crystallinity, defects, or strain in countless materials. However, the Raman response of surfaces or thin films is often weak and obscured by dominant bulk signals. Here we overcome this limitation by placing a transferable porous gold membrane, (PAuM) on the surface of interest.

6. Conclusions We have developed a uni-directional coupling of global axisymmetric calculations using the open source package Elmer with local axisymmetric calculations of dislocation densities in the crystal using the software tool MACPLAS. The local simulations apply a series of crystal shapes (including melt/crystal interface) as the geometrical input and the series of temperature distributions at the rim of the crystal as thermal boundary conditions for the calculations.

To conclude the misfit dislocation generation mechanism in SiGe/Si/SiGe heterostructures, we may summarize the main electron microscopy results in Figs. 3 and 4. (1) All Si quantum well layers that are thicker than the critical thickness given by the Matthews–Blakeslee criterion (samples A, B, and C) exhibit misfit dislocations at the interface between the quantum well layer and the relaxed buffer. (2) All analyzed misfit dislocations in samples A, B, and C have a line direction along ⟨110⟩.