Kyeong Rok Ko

Figure 1a displays an optical microscopic (OM) image of our p-MoTe /n-MoS channel JFET device fabricated on 285-nm-thick SiO /p-Si wafer. Pt and Au are used as source/drain ohmic electrodes, respectively, for MoTe and MoS channel. As shown in a 3D schematic device view in Fig. 1c, hexagonal 2H-MoS channel overlies on 2H-MoTe when the two channels cross each other. The two semiconducting TMDs are simultaneously and clearly identified by micro Raman spectroscopy as shown in Fig.