Kyong Jae Kim

Functional Inorganic Materials and DevicesFebruary 1, 2026 Kyong Jae Kim Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea Eun Seo Jo Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea Institute of...

Cite Jump to ExpandCollapse Functional Inorganic Materials and DevicesFebruary 1, 2026 Ultrathin ZrO2 Seed Layers for Low-Temperature Orthorhombic Ferroelectric Hf1–xZrxO2 Click to copy article linkArticle link copied! Kyong Jae Kim Kyong Jae Kim Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea Eun Seo...

1 Introduction Increasing the memory density of the current complementary-metal-oxide-semiconductor (CMOS) technology is the key challenge faced by researchers due to the physical and fundamental limitations of Von Neumann architecture.[1] One solution to this limitation is to stack the devices on a 3D plane rather than a 2D plane.