Lado Filipovic

Abstract Dynamic Random Access Memory (DRAM), a critical component in modern computing systems, relies heavily on the structural integrity of its active area (AA) - a fin-shaped transistor region responsible for charge transfer in memory cells. During advanced DRAM fabrication, the plasma etching process often induces shape distortions in the AA region (termed “wiggling AA”), which degrade capacitive charging/discharging efficiency and device reliability.

1. Introduction In the past five decades, extensive research has been conducted on the amplification of space charge waves through the utilization of negative differential conductance (NDC) [1,2,3,4,5]. These devices find applications in a wide range of fields, such as amplifiers, oscillators, and frequency multipliers, particularly in the millimeter and sub-millimeter wave range.

Abstract Electronic devices based on two-dimensional semiconductors suffer from limited electrical stability because charge carriers originating from the semiconductors interact with defects in the surrounding insulators. In field-effect transistors, the resulting trapped charges can lead to large hysteresis and device drifts, particularly when common amorphous gate oxides (such as silicon or hafnium dioxide) are used, hindering stable circuit operation.