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M. Sometani on Muck Rack

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Carbon dangling-bond center (carbon Pb center) at 4H-SiC(0001)/SiO2 interface

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By T. Kobayashi, T. Umeda, M. Sometani, H. Yano
| AIP Publishing
We identify a carbon dangling-bond center intrinsically formed at thermally oxidized 4H-SiC(0001)/SiO interfaces. Our electrically detected-magnetic-resonance spectroscopy and first-principles calculations demonstrate that this center, which we name “the P center,” is formed at a carbon adatom on the 4H-SiC(0001) honeycomb-like structure.
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