Maayan Vizner Stern

The emergence of sliding two-dimensional (2D) ferroelectric materials, (1,2) particularly r-TMDs, (3) has opened a new frontier in quantum materials. In these systems, lateral shifts between crystalline layers can induce reversible changes in out-of-plane electric polarization, (4,5) enabling applications ranging from nonvolatile memories to high-performance photodetectors.

1 Introduction Symmetry manipulation by stacking order control in 2D crystals has been identified as a route for accessing various ferroelectric phases in 2D material stacks.[1-11] For example, broken inversion and mirror symmetries in rhombohedral (r) stacks of van der Waals (vdW) materials made of binary compounds, e.g., boron nitride (BN) and various transition metal dichalcogenides (TMDs), lead to spontaneous interlayer charge transfer and the emergence of interface-confined electric fields.