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Superoxide-Anion-Dominated Labeling of Graphene Defects in an Interfacial Nanoreactor of Electron-Donated Substrate
1 Introduction Structural imperfections, including grain boundaries, topological wrinkles, and atomic vacancies, arise inherently during graphene synthesis via chemical vapor deposition (CVD), as the most industrially viable method [1], modulating the fundamental properties of graphene, i.e., electronic transport and mechanical performance [2, 3].
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