Mihiro Asakura

Editor’s summary Abstract Supplementary Materials References and Notes Information & Authors Metrics & Citations Check Access References Figures Tables Media Share Editor’s summary Nonvolatile switching devices are an important component of data-processing architectures. However, increasing the processing speeds beyond the nanosecond scale while keeping the switching power low has been challenging.

Abstract Antiferromagnets have gained a growing interest for next-generation spintronic applications. Among them, the antiferromagnetic Weyl semimetal Mn3Sn stands out because of its electrical and magnetic properties driven by its non-collinear spin structure at room temperature. Despite research progress on the current-induced switching of the magnetic octupole in Mn3Sn, the ultrafast switching inherent to the antiferromagnet remains to be resolved, and the underlying mechanism is yet elusive.

1 Introduction The study of exchange coupling through an interface of magnetic nanostructures has propelled the advance of spintronics and its related technologies. One of the typical examples is the exchange bias (EB) that arises at the interface between magnetic particles or thin films.