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Influence of Ammonia Flow on Microstructural Properties of Polar GaN Layers Grown by HTVPE on Sapphire Substrates
In this contribution, the correlation between the microstructure of thin gallium nitride films and the ammonia flow applied during their growth by high-temperature vapor phase epitaxy is described. The films were grown directly on (001)-oriented sapphire substrates. Their microstructure was investigated using high-resolution X-ray diffraction, electron microscopy and micro-Raman spectroscopy.
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