O. O. Versolato

Abstract State-of-the-art nanolithography uses extreme ultraviolet (EUV) radiation at 13.5 nm emitted from tin laser-produced plasma (LPP), driven by a 10.6 µm wavelength CO2-gas laser, to create the smallest features on semiconductor devices. Advances in solid-state laser technologies have led to the alternative concept of a 2-µm-wavelength-driven LPP as a promising candidate for a more efficient and more powerful EUV source.

Abstract Extreme ultraviolet (EUV) lithography is currently entering high-volume manufacturing to enable the continued miniaturization of semiconductor devices. The required EUV light, at 13.5 nm wavelength, is produced in a hot and dense laser-driven tin plasma. The atomic origins of this light are demonstrably poorly understood. Here we calculate detailed tin opacity spectra using the Los Alamos atomic physics suite ATOMIC and validate these calculations with experimental comparisons.