Oleksander Kysliak

1 Introduction Group 13 nitride (III–V) semiconductors have emerged as strong candidates in a multitude of electronic and optoelectronic applications.[1] For example, InxGa1-xN alloys span band gaps ranging from approximately 0.7 eV (InN)[2] to 3.4 eV (GaN),[3] making this material useful for light-emitting diodes and laser diodes.[4] Metal dinitridocarbonates, which are more commonly referred to as carbodiimides (NCN)2– or cyanamides (N≡C–N)2– have been successfully established as...