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Paiwen Fang on Muck Rack

Paiwen Fang

As seen in: Royal Society of Chemistry
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Articles

High-quality heteroepitaxy of ε-Ga2O3 films on 4H-SiC substrates via MOCVD

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By Shujian Chen, Zimin Chen, Weiqu Chen, Paiwen Fang
| Royal Society of Chemistry Verified
High-quality heteroepitaxy of ε-Ga2O3 films on 4H-SiC substrates via MOCVD In this study, high-quality ε-Ga2O3 epitaxial layers were grown on silicon carbide (4H-SiC) substrate via metal-organic chemical vapor deposition (MOCVD) with a two-step growth method. The (004) rocking curve full width of half maximum (FWHM) of the ε-Ga2O3 epitaxial layer is achieved as small as 0.09° （341 arcsec）, which is currently reported minumum value using MOCVD method.
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