Peize Yuan

The two-dimensional layered material-based multifunctional transistors are expected to be core devices in the post-Moore era. However, the relationship between layer thickness and device performance remains unclear. Here, we design the layer InSe transistors integrating switching and photodetection functions, exhibiting the fast-switching time and high responsivity when choosing the layer numbers of 2 and 3.

Abstract The two-dimensional homojunction is promising in electronic and optoelectronic applications. However, its performance is restricted by lattice mismatch and the depletion region. Here, we construct a monolayer InSe-based p-i-n homojunction photodetector. It presents high photoelectric conversion with a wide light response in the photon-energy range from 1.4 to 5 eV, which induces a photocurrent density of 13.13 nA m−1 and a photoresponsivity of 0.022 A W−1.