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Pengju Cui

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Articles

Multimode GaN Transistors with Ultrawide Threshold Voltage Control Enabled by Passivation-Induced Stress–Strain–Polarization Coupling Click to copy article link Article link copied!

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By Siyu Liu, Yihao Zhuang, Pengju Cui
| dx.doi.org
Functional Inorganic Materials and DevicesMay 25, 2026 * Siyu Liu Energy Research Institute @ NTU, Nanyang Technological University, 1 CleanTech Loop, #06-04, Singapore 637141, Republic of Singapore *Email: sy.liu@ntu.edu.sg Yihao Zhuang Energy Research Institute @ NTU, Nanyang Technological University, 1 CleanTech Loop, #06-04, Singapore 637141, Republic of Singapore School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Ave., Singapore 639798, Republic...
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Analysis of Leakage Channel with Different Al Composition back Barriers in AlN/GaN High‐Electron‐Mobility Transistors on Silicon

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By Siyu Liu, Yihao Zhuang, Hanchao Li, Pengju Cui
| Wiley Online Library Verified
Conflict of Interest The authors declare no conflict of interest. Data Availability Statement Research data are not shared. References 1 , , , , , , , , , , IEEE Electron Device Lett. 2024, 45, 2315. 2 , , , , , , , , IEEE Electron Device Lett. 2023, 44, 911. 3 , , , , , , , , , , , IEEE Electron Device Lett. 2022, 43, 1621. 4 , , , , Appl. Phys. Lett. 2023, 123, 142102. 5 , , , , , , IEEE Trans. Electron Devices 2021, 68, 1513. 6 , , , , , , IEEE Electron Device Lett. 2011, 32, 1230. 7 , , , , , , , , Appl.
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