Prabhat Singh on Muck Rack

Prabhat Singh

As seen in: Wiley Online Library, Cisco Blogs, Frontiers, MDPI, The Indiegogo Review, Firstpost, Mint, Outlook (India), The Hindu, Royal Society of Chemistry and
Tech, Policy and Journalism; @UChicago and @chicagosmayor I like working on passion projects involving data and narrative.
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Articles

Tata Power achieves a double milestone of 1 lakh home

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By Prabhat Singh
| Indus Valley Times
Tata Power achieves a double milestone of 1 lakh home and 1000 e-bus chargers; spearheading e-mobility charging infra across India By Prabhat Kumar Singh New Delhi/Bhubaneswar, Sept. 9 : On the occasion of World EV Day, Tata Power, one of India’s largest integrated power companies and a leading provider of electric vehicle charging solutions, is proud to announce that it has surpassed the installation of 1 lakh home EV chargers across the country.
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A case of COVID‐19‐associated C‐ANCA vasculitis, was successfully treated with rituximab therapy

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By FSU College, Deepak Chandramohan, Prabhat Singh, Michael Filoramo
| Wiley Online Library Verified
1 INTRODUCTION Anti-neutrophil cytoplasmic antibody (ANCA) associated vasculitis is a group of systemic vasculitis that causes inflammation and destruction of the small and medium-sized blood vessels. It is one of the major causes of rapidly progressive renal failure, and it carries the risk of significant morbidity and mortality. SARS-CoV-2 (COVID-19) infection and COVID-19 vaccination have been shown to increase the risk for autoimmune diseases.
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Analog and linearity performance analysis of ferroelectric vertical tunnel field effect transistor with and without source pocket

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By Ashish Kumar Singh Verified, Ramesh Kumar, Prabhat Singh, Heranmoy Maity
| Wiley Online Library Verified
REFERENCES 1, , , . Numerical simulations of a novel CH3NH3PbI3 based double-gate dopingless tunnel FET. Semicond Sci Technol. 2021; 36(5):055008. doi:10.1088/1361-6641/abec13 2, , , et al. FinFET: a self-aligned double-gate MOSFET scalable to 20 nm. IEEE Trans Electron Dev. 2000; 47(12): 2320-2325. doi:10.1109/16.887014 3, . Interfacial charge analysis of heterogeneous gate dielectric-gate all around-tunnel FET for improved device reliability. IEEE Trans Dev Mater Reliab. 2016; 16: 227-234.
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