Qinci Wu

Editor’s summary The ferroelectric oxide Bi2SeO5 has a high-dielectric constant that enables high-performance ferroelectric field-effect transistors (FeFETs). Wu et al. oxidized Bi2O2Se films grown on 10-centimeter sapphire substrates to form Bi2SeO5 films at temperatures compatible with chip fabrication (see the Perspective by Behera and Cheema). These films exhibited robust ferroelectricity at monolayer thickness.

Conflict of Interest The authors declare no conflict of interest. Data Availability Statement The data that support the findings of this study are available from the corresponding author upon reasonable request. Supporting Information Filename Description adma71628-sup-0001-SuppMat.docx2.4 MB Supporting Information References 1, , , , Nanoscale Res. Lett. 2015, 10, 199. 2, , , , Front. Information Technol. Electronic Engineering 2019, 20, 458. 3, , , , , , , , , , , , Nat. Commun. 2021, 12, 806.