Riccardo Torsi

R. Colby Evans, , , , , Paul Owiredu, Gurpreet Singh, Jerzy Sadowski, , Transition metal dichalcogenides like molybdenum disulfide (MoS2) are compelling for next-generation electronic devices.

1 Introduction 2D transition metal dichalcogenides (TMDs) feature a unique combination of atomic-scale thickness and remarkable (opto)electronic properties, rendering them leading candidates for next-generation devices ranging from flexible photodetectors to ultra-scaled field-effect transistors (FETs) [1-3]. Achieving reliable, wafer-scale production of TMDs is essential for their practical implementation [4].

Two dimensional (2D) materials are of interest for a wide range of applications, including low-power electronics, catalysis, optoelectronics, and quantum information. Scalable synthesis is the foundation of a "Lab-to-Fab" transition, where significant advances in material scalability over the last few years is made possible via common industrially adopted thin film deposition techniques.