Richard Stevenson

VisIC plans to ramp production of its GaN depletion-mode HEMTs for electric vehicle inverters before the end of this decade. BY RICHARD STEVENSON, EDITOR, CS MAGAZINE Designers of electric vehicles are facing a dilemma when selecting the power electronics for their drive trains. To trim the bill of materials, they favour the use of the silicon IGBT.

Migrating the manufacture of GaN power devices to 300 mm lines will boost yield, improve metrology and trim costs. BY RICHARD STEVENSON, EDITOR, CS MAGAZINE A common metric for measuring performance of any device is the bang per buck. When it comes to GaN, there are many ways to measure that ‘bang’. They include the on-resistance, the breakdown voltage, and the mobility of the two-dimensional electron gas. But what about the ‘buck’?

Opening an additional fab in Nanjing will help to grow sales of SMC Diode Solution’s SiC products to around half the company’s revenue. BY RICHARD STEVENSON, EDITOR, CS MAGAZINE Within our industry, one of the biggest trends is the growth in sales of SiC devices by companies with a strong pedigree in producing silicon power electronics.