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Roberto Guido

San Diego
As seen in: Wiley Online Library, Corriere Della Sera, Dialnet - Universidad de La Rioja
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Articles

Agenesia Nasal

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By Gisela Fonseca Portilla, Roberto Guido, Fonseca Portilla, Herrera Guido
| Dialnet - Universidad de La Rioja
Ayuda Buscar en la ayuda Buscar en la ayuda Agenesia Nasal Autores: Gisela Fonseca Portilla, Roberto Herrera Guido Localización: Acta Médica Costarricense, ISSN 0001-6012, ISSN-e 2215-5856, Vol. 40, Nº.
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Ferroelectric Al1‐xScxN Opposite State Retention Model Based on Switching Dynamics

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By Roberto Guido, Thomas Mikolajick, Simon Fichtner, Maike Gremmel
| Wiley Online Library Verified
Conflict of Interest The authors declare no conflict of interest. Supporting Information Filename Description adfm202421793-sup-0001-SuppMat.pdf3.3 MB Supporting Information References 1, , , , , , , , J. Appl. Phys. 2021, 129, 100901. 2, , , , Nat. Nanotechnol. 2023, 18, 422. 3, , In Nanoelectronics and Information Technology: Advanced Electronic Materials and Novel Devices, Wiley-VCH, Weinheim 2012. 4, , , , , , , , , , , , , , , , , , , , , , , , , In 2023 Int.
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Long‐Term Stability and Oxidation of Ferroelectric AlScN Devices: An Operando Hard X‐ray Photoelectron Spectroscopy Study

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By Oliver Rehm, Lutz Baumgarten, Roberto Guido, Pia Maria Düring
| Wiley Online Library Verified
1 Introduction Complementary metal-oxide-semiconductor (CMOS) compatible ferroelectric (FE) materials have only been discovered in the last 10 years,[1, 2] which has spurred renewed interest and research into FE devices such as FE random access memories,[3] FE field-effect transistors,[4] or FE tunnel junctions.[5] Scandium-doped AlN (AlScN)[2] extends the growing field of nitride electronics[6, 7] with FE functionality in terms of large polarization, large coercive fields, and a nearly...
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