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Correction to “Achieving a High zTavg in n-Type Sb-Doped Mg2Si0.3Sn0.7 via High-Pressure-Modulated Microstructures”
In the originally published article, an error occurred in the institutional affiliation of the authors. The affiliation was incorrectly listed as “Normal University”, whereas the correct institutional name should be “Qufu Normal University”. The same correction has also been applied to the Supporting Information. This correction concerns only the institutional affiliation and does not affect the scientific content, data interpretation, or conclusions of the article in any way.
Achieving a High zTavg in n-Type Sb-Doped Mg2Si0.3Sn0.7 via High-Pressure-Modulated Microstructures Original
Functional Inorganic Materials and DevicesMarch 26, 2025 Xiangyang Dong Laboratory of High-Pressure Physics and Materials Science (HPPMS), School of Physics and Physical Engineering, Normal University, Qufu, Shandong 273165, China Advanced Research Institute of Multidisciplinary Sciences, Qufu Normal University, Qufu, Shandong 273165, China Ruying Zhai Laboratory of High-Pressure Physics and Materials Science (HPPMS), School of Physics and Physical Engineering, Normal University, Qufu,...
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