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Seung Mun Baek

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Articles

Barrier Height, Ideality Factor and Role of Inhomogeneities at the AlGaN/GaN Interface in GaN Nanowire Wrap-Gate Transistor

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By Peddathimula Puneetha, Yeojin Choi, Seung Mun Baek, Dong-yeon D. Lee
| MDPI
All articles published by MDPI are made immediately available worldwide under an open access license. No special permission is required to reuse all or part of the article published by MDPI, including figures and tables. For articles published under an open access Creative Common CC BY license, any part of the article may be reused without permission provided that the original article is clearly cited. For more information, please refer to https://www.mdpi.com/openaccess.
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Temperature-Dependent Carrier Transport in GaN Nanowire Wrap-Gate Transistor

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By Peddathimula Puneetha, Yeojin Choi, Seung Mun Baek, Sung Jin An
| MDPI
Open AccessCommunication by Siva Pratap Reddy Mallem 1,†, Peddathimula Puneetha 2,†, Yeojin Choi 3, Seung Mun Baek 3, Sung Jin An 3,* and Ki-Sik Im 4,* 1 Advanced Material Research Center, Kumoh National Institute of Technology, Gumi 39177, Republic of Korea 2 Department of Robotics and Intelligent Machine Engineering, College of Mechanical and IT Engineering, Yeungnam University, Gyeongsan 38541, Republic of Korea 3 Department of Materials Science and Engineering, Kumoh National Institute of...
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