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Articles

Anhydrous Atomic Layer Deposition of HfO2: Mechanistic Analysis of the Tetrakis(dimethylamido)hafnium (TDMAH)-O2 Process

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By Miso Kim, Seunggi Seo, Yujin Lee, Woong Pyo Jeon
| ACS Publications
Cite Jump to ExpandCollapse ArticleDecember 15, 2025 Anhydrous Atomic Layer Deposition of HfO2: Mechanistic Analysis of the Tetrakis(dimethylamido)hafnium (TDMAH)–O2 Process Click to copy article linkArticle link copied! Miso Kim Miso Kim Department of Chemical Engineering, Stanford University, Stanford, California 94305, United States Department of Chemical Engineering, Hongik University, Mapo-Gu, Seoul 04066, South Korea Seunggi Seo Seunggi Seo Department of Chemical Engineering, Stanford...
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HfO2 Area-Selective Atomic Layer Deposition with a Carbon-Free Inhibition Layer

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By Yujin Lee, Seunggi Seo, Alexander B. Shearer, Andreas Werbrouck
| ACS Publications
Download Hi-Res ImageDownload to MS-PowerPointCite This:Chem. Mater. 2024, XXXX, XXX Terms & Conditions Most electronic Supporting Information files are available without a subscription to ACS Web Editions. Such files may be downloaded by article for research use (if there is a public use license linked to the relevant article, that license may permit other uses).
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Simultaneous improvement of the dielectric constant and leakage currents of ZrO2 dielectrics by incorporating a highly valent Ta5+ element

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By Bo-Eun Park, Il-Kwon Oh, Jong Park, Seunggi Seo
| Royal Society of Chemistry Verified
Dynamic random access memory (DRAM) is reaching the scaling limit owing to the requirements for a high capacitance density and low leakage current of metal–insulator–metal (MIM) capacitors. We investigated the Ta-doped ZrO dielectric as a novel high-k candidate, utilizing the precise control of Ta-doping concentration using the atomic layer deposition (ALD) supercycle process.
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