Shengying Yue

Abstract Strain in crystalline materials refers to the deviation of lattice sites from their ideal equilibrium positions. In crystalline semiconductors, the reliable management of strain is vital for simultaneously achieving high electronic quality and structural robustness. For metal halide perovskites, the complexity of material composition and crystallization dynamics introduces substantial challenges in strain engineering, hampering the long-term stability of perovskite devices.

Abstract Nanoscale structures can produce extreme strain that enables unprecedented material properties, such as tailored electronic bandgap1,2,3,4,5, elevated superconducting temperature6,7 and enhanced electrocatalytic activity8,9. While uniform strains are known to elicit limited effects on heat flow10,11,12,13,14,15, the impact of inhomogeneous strains has remained elusive owing to the coexistence of interfaces16,17,18,19,20 and defects21,22,23.

Abstract The transformation induced plasticity phenomenon occurs when one phase transforms to another one during plastic deformation, which is usually diffusionless. Here we present elemental partitioning-mediated crystalline-to-amorphous phase transformation during quasi-static plastic deformation, in an alloy in form of a Cr-Ni-Co (crystalline)/Zr-Ti-Nb-Hf-Ni-Co (amorphous) nanolaminated composite, where the constitute elements of the two phases have large negative mixing enthalpy.