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Analytical Modeling and Channel Noise Analysis of Double Material Double Gate Junctionless (DMDG JL) MOSFET
Conflicts of Interest The authors declare no conflicts of interest. Data Availability Statement The data that support the findings of this study are available on request from the corresponding author. The data are not publicly available due to privacy or ethical restrictions. References 1, , , et al., “Nanowire Transistors Without Junctions,” Nature Nanotechnology 5 (2010): 225–229.
Low‐Frequency Noise Analysis of GSCG Double‐Gate MOSFET in the Subthreshold Region
References 1 and , “Analytical Analysis of Nanoscale Fully Depleted Double Gate MOSFETs Including the Hot-Carrier Degradation Effects,” International Journal of Electronics 97 (2010): 119–127. 2, , , and , “Drain Current Model for Undoped Gate Stack Double Gate (GSDG) MOSFETs Including the Hot-Carrier Degradation Effects,” Microelectronics and Reliability 51 (2011): 550–555.
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