Sungjae Cho

Abstract Tin (Sn2+) halide perovskites are promising lead-free semiconductors for optoelectronic and electronic devices, owing to their tunable bandgaps and favourable charge transport1,2. However, their practical implementation is fundamentally limited by an intrinsic redox instability at undercoordinated Sn2+ sites, which drives uncontrolled self-p-doping and rapid oxidative degradation3,4.

Abstract An increase in power consumption necessitates a low-power circuit technology to extend Moore’s law. Low-power transistors, such as tunnel field-effect transistors (TFETs), negative-capacitance field-effect transistors (NC-FETs), and Dirac-source field-effect transistors (DS-FETs), have been realised to break the thermionic limit of the subthreshold swing (SS).

Abstract The continuous down-scaling of transistors has been the key to the successful development of current information technology. However, with Moore’s law reaching its limits, the development of alternative transistor architectures is urgently needed1. Transistors require a switching voltage of at least 60 mV for each tenfold increase in current, that is, a subthreshold swing (SS) of 60 mV per decade (dec).