Sunil V. Barma

Abstract Disorder-induced energetic landscape in semiconductors is typically regarded as a parasitic source of non-radiative energetic losses, yet emerging theory suggests that controlled cationic disorder in multicomponent chalcogenides can define reproducible routes for achieving exceptional optical and electrical properties.

Development of a novel high performing inorganic p-type thin film transistor could pave the way for new transparent electronic devices. This complements the widely commercialized n-type counterparts, indium gallium zinc oxide (IGZO). Of the few potential candidates, copper monoiodide (CuI) stands out. It boasts visible light transparency and high intrinsic hole mobility (> 40 cm2 V−1 s−1), and is suitable for various low-temperature processes.