Syed Ghazi Sarwat

Abstract Phase-change memory devices have found applications in in-memory computing where the physical attributes of these devices are exploited to compute in places without the need to shuttle data between memory and processing units. However, nonidealities such as temporal variations in the electrical resistance have a detrimental impact on the achievable computational precision.

The memristor, in which an external electric field controls the formation and annihilation of conductive channels, has been described both as a missing electronic element and a memory and computational element. Here, their utility as building blocks for promising reflective and energy-efficient colour technology is described. Fig. 1: Memristive colour technology. References 1. Figueiro, M. G. SID Symp. Dig. Tech. Pap. 48, 302–305 (2017). Article Google Scholar 2. Yan, Z. et al. Nat. Nanotechnol.