Venkata Puli

Abstract Non-volatile memory devices that can operate reliably at high temperature are required for the development of extreme environment electronics. However, creating such devices remains challenging. Here we report a non-volatile memory device that is based on an aluminium scandium nitride (Al0.68Sc0.32N) ferroelectric diode and can operate at temperatures of up to 600 °C. The devices are composed of metal–insulator–metal structures of nickel/AlScN/platinum grown on 4-inch silicon wafers.