Vineetha Mukundan on Muck Rack

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Implementation of high-performance and high-yield nanoscale hafnium zirconium oxide based ferroelectric tunnel junction devices on 300 mm wafer platform: Journal of Vacuum Science & Technology B: Vol 41, No 1

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By Karsten Beckmann, Maximilian Liehr, Jubin Hazra, Vineetha Mukundan
| avs.scitation.org
Free Journal of Vacuum Science & Technology B 41, 012805 (2023); https://doi.org/10.1116/6.0002097 In this work, hafnium zirconium oxide (HZO)-based 100 × 100 nm2 ferroelectric tunnel junction (FTJ) devices were implemented on a 300 mm wafer platform, using a baseline 65 nm CMOS process technology. FTJs consisting of TiN/HZO/TiN were integrated in between metal 1 (M1) and via 1 (V1) layers.
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