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Boronization: A General Strategy for Rare Earth Oxides with Enhanced High-κ Gate Dielectric Performance
Rare earth oxides (REOs) can be used as high-κ gate dielectrics that are at the core of electronic devices. However, a bottleneck remains with regard to obtaining high-performance REO dielectrics due to the serious hygroscopic issue and high defect states. Here, a general boronization strategy is reported to enhance the high-κ REO gate dielectric performance.
Aqueous Solution-Processed Nanometer-Thin Crystalline Indium Ytterbium Oxide Thin-Film Transistors
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