Witold Skowroński on Muck Rack

Witold Skowroński

As seen in: Nature, Wiley Online Library, Physical Review B
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Articles

Magnetic tunnel junction made of abundant materials for memory and dynamic applications - Scientific Reports

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By Witold Skowroński
| Nature
Abstract Magnetic tunnel junction (MTJ) used currently for data storage are characterized by perpendicular magnetic anisotropy, which is beneficial in terms of low current density required for switching and the thermal stability of the free magnetic layer.
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Gate‐Tunable Exchange Bias and Volage‐Controlled Magnetization Switching in a van der Waals Ferromagnet

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By Mayank Sharma, Garen Avedissian, Witold Skowroński, Junhyeon Jo
| Wiley Online Library
1 Introduction Exchange bias (EB) is a phenomenon observed when an antiferromagnetic (AFM) material is in contact with a ferromagnetic (FM) or ferrimagnetic material.
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Magnetization dynamics driven by displacement currents across a magnetic tunnel junction

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By Paul S. Keatley, Witold Skowroński, Jakub Mojsiejuk, C.K. Safeer
| Physical Review B
Understanding the high-frequency transport characteristics of magnetic tunnel junctions (MTJs) is crucial for the development of fast-operating spintronics memories and radio frequency devices. Here, we present the study of a frequency-dependent capacitive current effect in CoFeB/MgO-based MTJs and its influence on magnetization dynamics using a time-resolved magneto-optical Kerr effect technique.
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