Wlodek Strupinski

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Typically, the term “epitaxial graphene” refers to graphene grown on SiC which is in fact not done by epitaxy but by sublimation of silicon. In this study graphene is grown by traditional Chemical Vapor Deposition (CVD) epitaxy using carbon precursor or more accurately by Vapor Phase Epitaxy (VPE)25. This method enables the growth of carbon layers directly on SiC surface on both silicon (Si) and carbon (C) polarities with the precision of synthesizing a pre-defined number of carbon layers.