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Abstract Tin (Sn2+) halide perovskites are promising lead-free semiconductors for optoelectronic and electronic devices, owing to their tunable bandgaps and favourable charge transport1,2. However, their practical implementation is fundamentally limited by an intrinsic redox instability at undercoordinated Sn2+ sites, which drives uncontrolled self-p-doping and rapid oxidative degradation3,4.
Abstract 2D tin-based perovskites have gained considerable attention for use in diverse optoelectronic applications, such as solar cells, lasers, and thin-film transistors (TFTs), owing to their good stability and optoelectronic properties. However, their intrinsic charge-transport properties are limited, and the insulating bulky organic ligands hinder the achievement of high-mobility electronics.
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