Wookhee Lee

Joonki Suh Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919 South Korea Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919 South Korea Search for more papers by this author

Following an initial nucleation stage at the flake level, atomically thin film growth of a van der Waals material is promoted by ultrafast lateral growth and prohibited vertical growth. To produce these highly anisotropic films, synthetic or post-synthetic modifications are required, or even a combination of both, to ensure large-area, pure-phase and low-temperature deposition.