Ye Kyun Kim on Muck Rack

Ye Kyun Kim

As seen in: British Journal of Cancer
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Low voltage-driven oxide phototransistors with fast recovery, high signal-to-noise ratio, and high responsivity fabricated via a simple defect-generating process : Scientific Reports

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By Cheol Hyoun Ahn, Hyung Koun Cho, Myeong Gu Yun, Ye Kyun Kim
| British Journal of Cancer Verified
Figure 1a shows the transfer curves of the IGZO TFTs on 100 nm thick Al O gate insulators deposited by an atomic layer deposition (ALD) process at 150 °C. The IGZO channel layers were deposited by RF magnetron sputtering with different deposition power densities of 0.62 and 1.85 W cm−2. The schematic view of the TFT structure is illustrated in the inset of Fig. 1a which corresponds to an inverted-staggered bottom-gate structure.
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