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Dislocation analysis of germanium wafers under 1080  nm laser ablation

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By Yunxiang Pan, Pengyu Nan, XiaoWu Ni, YinChuan Sha
| osapublishing.org
Abstract COMSOL Multiphysics was employed to establish a dislocation model based on the Alexander and Haasen (AH) model, the heat conduction equation, and Hooke’s law for calculating the dislocation distribution of germanium (Ge) under laser irradiation. The numerical simulation results were obtained. A continuous 1080 nm laser was utilized to ablate the monocrystalline Ge wafers to validate the model.
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