Skip To Main Content
Yinfei Xie on Muck Rack

Yinfei Xie

As seen in: Frontiers in Medicine, ACS Publications
Is this you? As a journalist, you can create a free Muck Rack account to customize your profile, list your contact preferences, and upload a portfolio of your best work. Claim your profile

Get in touch with Yinfei

Contact Yinfei, search articles and posts on X, monitor coverage, and track replies from one place.

Learn more about Muck Rack

Actions

Share this page

Is this you?

As a journalist, you can create a free Muck Rack account to customize your profile, list your contact preferences, and upload a portfolio of your best work.
Claim your profile

Articles

Clinical outcomes associated with adding pelvic correction manipulation to adjacent needling for lumbar disc herniation: a prospective comparative cohort study

|
By Jingyan Xu, Yinfei Xie, Xiaohua Liu, Xinjian Ma
| Frontiers in Medicine
Abstract Background: Lumbar disc herniation (LDH) commonly causes persistent pain, disability, and recurrence despite conservative care. Whether pelvic correction manipulation adds durable benefit to adjacent needling remains uncertain. Objective: This study aimed to evaluate the association of adding pelvic correction manipulation to adjacent needling with disability, pain, and recurrence in LDH.
Open in Who Shared Issue with article?

Strain- and Ar/H2 Annealing-Induced Sulfur Defects in Monolayer MoS2 Probed by Raman Spectroscopy

|
By Yuxiang Chen, Zhengyue Li, Yinfei Xie, Bo Zou
| dx.doi.org
Open in Who Shared Issue with article?

Extremely Low Thermal Resistance of β-Ga2O3 MOSFETs by Co-integrated Design of Substrate Engineering and Device Packaging

|
By Zhenyu Qu, Yinfei Xie, Tiancheng Zhao, wenhui Xu
| dx.doi.org
Introduction Click to copy section linkSection link copied! Ultrawide bandgap semiconductors have garnered significant attention due to the growing demand for high-power electronic devices. As one of the most promising ultrawide bandgap semiconductors, β-Ga2O3 has an ultrawide bandgap of 4.8 eV, high breakdown electric field of 8 MV/cm, excellent Baliga figure of merit, and the potential for cost-effective large-scale wafer manufacturing, which is very suitable for high power application.
Open in Who Shared Issue with article?
See all 4 articles