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Ying-Chen Chen

As seen in: MDPI, The Astronomical Journal
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Articles

Dental Occlusion Characteristics for Treatment Decision-Making Regarding Surgery-First Approach in Orthodontics

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By Ying-Chen Chen, Carol Chen, Min-Chi Chen, Ellen Ko
| MDPI
Open AccessArticle by 1,2, 2,3, 4, 1,3,5,* and 5,6 1 Graduate Institute of Dental and Craniofacial Science, Chang Gung University, Taoyuan 333, Taiwan 2 Department of Craniofacial Orthodontics, Chang Gung Memorial Hospital, Taoyuan 333, Taiwan 3 Department of Craniofacial Orthodontics, Chang Gung Memorial Hospital, Taipei 105, Taiwan 4 Department of Public Health and Biostatistics Consulting Center, School of Medicine, Chang Gung University, Taoyuan 333, Taiwan 5 Craniofacial Research Center,...
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Self-Selective Dielectric-Fuse Effect with Ambient Factors in Oxide-Based Memory

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By Ying-Chen Chen, Yifu Huang, Jack Lee Verified, Justin B. Stouffer
| The Astronomical Journal Verified
Ying-Chen Chen1, Yifu Huang2, Jack C. Lee2 and Justin B. Stouffer3 • © 2023 The Electrochemical Society ("ECS"). Published on behalf of ECS by IOP Publishing Limited ECS Journal of Solid State Science and Technology, Volume 12, Number 6 Citation Ying-Chen Chen et al 2023 ECS J. Solid State Sci. Technol. 12 065003 DOI 10.1149/2162-8777/acd959 2162-8777/12/6/065003 Abstract A dual-function memory with CMOS compatibility has been presented with the feasibility of future embedded applications.
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Beyond SiOx: An Active Electronics Resurgence and Biomimetic Reactive Oxygen Species Production and Regulation from Mitochondrion

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By Ying-Chen Chen, Yao-Feng Chang, Burt W Fowler, Zhi-Yang Lin
| Royal Society of Chemistry Verified
We explore overcoming the non-oxidized environment requirement issues in silicon oxide- (SiOx) based memristors and investigate potential next steps for use of SiOx as a memristor material. A SiOx/HfOx stacked material was engineered, developed and tested to verify operation of the SiOx-based memristors, and the stacked material exhibits interfacial proton accumulation leading to ultra-low-voltage operation (< 2V).
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