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Performance Recovery of p‐GaN Etch‐Induced Degradation via Atomic Layer Deposition In Situ N2 Plasma and Postanneal‐Assisted Passivation
Conflict of Interest The authors declare no conflict of interest. Supporting Information Filename Description pssr202400211-sup-0001-SuppData-S1.pdf820.9 KB Supplementary Material References 1 , , , , , , , , , , , , , , J. Appl. Phys. 2021, 130, 181101. 2 , , , , J. Appl. Phys. 2021, 129, 121102. 3 , , , , , , in 2018 IEEE 30th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), IEEE, 2018, 188–191. 4 , , , , , , , , , , , , , , in 2018 IEEE 30th Int. Symp.
[2407.05610] Described Spatial-Temporal Video Detection
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