Yingguo Yang

Abstract Perovskite/perovskite/silicon-based triple-junction solar cells are a promising low-cost route to surpass the Shockley–Queisser efficiency limit of single-junction photovoltaics, but their performance is constrained by non-radiative losses in wide-bandgap perovskites and sub-optimal light management across the multilayer stack1-3. Here, we introduce a passivating molecule, 4F-POEABr, which strongly suppresses surface-defect-mediated recombination of WBG perovskite films.

Abstract Despite huge progress accomplished in perovskite light-emitting diodes (PeLEDs), the electroluminescence performance of blue PeLEDs lags far behind, constraining the widespread application of PeLED technology for vibrant full-colour displays1,2,3,4,5. The wider bandgaps of blue emitters require higher working voltages of corresponding electroluminescent devices, intensifying the octahedral instability of perovskites with ionic nature6,7.

Abstract Molecular additives are frequently employed to enhance the performance of perovskite light-emitting diodes (PeLEDs), either through surface defect passivation or crystal growth control. In general, such passivation is attained through the chelation of the molecular additive to a defective Pb site along a lattice plane. Unfortunately, nano-crystallites often display multiple lattice planes and defects that a single additive is inadequate in passivating.