Yingshi Jin

In this study, a series of bismuth telluride (Bi2Te3) samples doped with metal iodide (MI; M = Cu, Cs, K) were successfully prepared by the conventional solid-state reaction. Electron and thermal transport properties, i.e., electrical conductivity, carrier concentration, Hall mobility, Seebeck coefficient, thermal conductivity, of MI-doped Bi2Te3 were measured in the temperature range of 300–650 K to understand the effect of metal iodide doping upon the thermoelectric performance of Bi2Te3.

The effects of S doping at the oxygen site on the thermoelectric properties of BiOCuSe has been investigated. The partial substitution of S ions at O sites of BiOCuSe was achieved by sulfurization using CS2 gas. Analysis of the powder X-ray diffraction data indicates that the ZrCuSiAs structure of BiOCuSe is retained after sulfurization. Substitution of O by S leads to increase in the lattice parameters and decrease in the band gap.