Yongjae Cho

Abstract As silicon transistors scale toward future technology nodes, three-dimensional architectures—including gate-all-around (GAA) nanoribbon and complementary field-effect transistors (CFETs)—require channel widths in the tens of nanometers to meet density targets. Monolayer transition metal dichalcogenides (TMDs), with their atomically thin bodies, are promising channel materials for these architectures, yet most TMD-based FETs remain limited to micrometer-scale widths.

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