Yuewei Yin

Abstract HfO2-based ferroelectrics have emerged as promising candidates for next-generation information devices due to their excellent compatibility with complementary metal oxide semiconductor technology. However, achieving room-temperature multiferroicity in single-phase HfO2-based materials remains a rewarding yet challenging goal. Here, we report the discovery of room temperature multiferroicity in single-phase Cr-doped HfO2 films.

Abstract Hafnium oxide-based ferroelectric thin films are widely recognized as a CMOS-compatible and highly scalable material platform for next-generation non-volatile memory and logic devices. While out-of-plane ferroelectricity in hafnium oxide films has been intensively investigated and utilized in devices, purely in-plane ferroelectricity of hafnium oxides remains unexplored.

Abstract Dielectric capacitors are vital for modern power and electronic systems, and accurate assessment of their dielectric properties is paramount. However, in many prevailing reports, the fringing effect near electrodes and parasitic capacitance in the test circuit were often neglected, leading to overrated dielectric performances.