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Zhongying Xue

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Articles

A high-frequency silicon-graphene-germanium barristor

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By Xiaoyue Wang, HaiYan Jiang, Changze Li, Haitao Jiang, Jing Bai, Xubo Song, Xufan Li, Xinzhe Wang, Xi Zhu, Shun Feng, Jinhua Liang, Lingfei Wang, Zhongying Xue, Yutaka Ohno, Jianjun Gao, Zengfeng Di, Dongming Sun, Chi Liu, Shaotang Sun, Zishen Qiao
| Nature Verified
Abstract Realising ubiquitous environmental monitoring and smart sensing devices compatible with Internet of Things (IoT) and 6 G networks requires transistors with terahertz (THz) cutoff frequencies (fT) for efficient signal processing. However, the carrier transit time intrinsically limits conventional devices.
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Asynchronous Transition Across the Crystal-Melt Interface Revealed by Machine Learning Potentials

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By Haiyang Zhang, Zhongying Xue, Pai Li
| Wiley Online Library Verified
1 Introduction The structure of the crystal-melt interface plays a pivotal role in determining the kinetics of crystal growth, the evolution of microstructures, and the segregation behavior of impurities during solidification and melting processes [1-4]. In technologically critical materials such as silicon, which is foundational to semiconductors and photovoltaics, understanding the atomic-scale details of this interface is essential for controlling crystal quality and device performance [5-8].
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Deciphering the Complexity of Step Profiles on Vicinal Si(001) Surfaces Through Multiscale Simulations

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By Pai Li, Chao Zhao, Yun Liu, Zhongying Xue
| Wiley Online Library Verified
Conflict of Interest The authors declare no conflict of interest. Supporting Information Filename Description smll202407677-sup-0001-SuppMat.docx2.1 MB Supporting Information References 1, , , , , Prog. Surf. Sci. 1999, 60, 89. 2, , , , , , , , , , , Jpn. J. Appl. Phys. 2009, 48, 04C048. 3, , , , , , , , , , , , ECS J. Solid State Sci. Technol. 2016, 5, P67. 4, , , , Annu. Rev. Phys. Chem. 2000, 51, 527. 5, , , , , , , J. Cryst. Growth 2011, 315, 37. 6, , Prog. Cryst. Growth Charact. Mater. 2017, 63, 105.
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