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Dinesh Baral

As seen in: Wiley Online Library, ACS Publications
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Articles

Te Vacancies Induced Magnetic Domains and Domain Wall Stabilization on Fe 3 GeTe 2 Surfaces

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By Dinesh Baral, Hua Chen, Jifa Tian
| Wiley Online Library Verified
Conflicts of Interest The authors declare no conflicts of interest. Data Availability Statement The data that support the findings of this study are available on request from the corresponding author. The data are not publicly available due to privacy or ethical restrictions. Supporting Information Filename Description adfm77224-sup-0001-SuppMat.docx5.8 MB Supporting File: adfm77224-sup-0001-SuppMat.docx.
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Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge 0.85 Sn 0.15 on Ge(001) Click to copy article link Article link copied!

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By Nirosh M. Eldose, Diandian Zhang, Dinesh Baral
| ACS Publications
Introduction Click to copy section linkSection link copied! Germanium–tin (GeSn) alloys have emerged as a promising platform for infrared (IR) optoelectronics and silicon-compatible photonics, due to their tunable bandgap and potential to achieve a direct bandgap. (1−4) Unlike pure Ge, which has an indirect bandgap, GeSn transitions from an indirect to a direct bandgap, when the Sn content exceeds 6%, depending on strain.
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Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge 0.85 Sn 0.15 on Ge(001) Click to copy article link Article link copied!

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By Dinesh Baral, Nirosh M. Eldose, Diandian Zhang
| dx.doi.org
Introduction Click to copy section linkSection link copied! Germanium–tin (GeSn) alloys have emerged as a promising platform for infrared (IR) optoelectronics and silicon-compatible photonics, due to their tunable bandgap and potential to achieve a direct bandgap. (1−4) Unlike pure Ge, which has an indirect bandgap, GeSn transitions from an indirect to a direct bandgap, when the Sn content exceeds 6%, depending on strain.
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