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Nirosh M. Eldose on Muck Rack

Nirosh M. Eldose

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Articles

Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge 0.85 Sn 0.15 on Ge(001) Click to copy article link Article link copied!

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By Nirosh M. Eldose, Diandian Zhang, Dinesh Baral
| ACS Publications
Introduction Click to copy section linkSection link copied! Germanium–tin (GeSn) alloys have emerged as a promising platform for infrared (IR) optoelectronics and silicon-compatible photonics, due to their tunable bandgap and potential to achieve a direct bandgap. (1−4) Unlike pure Ge, which has an indirect bandgap, GeSn transitions from an indirect to a direct bandgap, when the Sn content exceeds 6%, depending on strain.
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Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge 0.85 Sn 0.15 on Ge(001) Click to copy article link Article link copied!

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By Dinesh Baral, Nirosh M. Eldose, Diandian Zhang
| dx.doi.org
Introduction Click to copy section linkSection link copied! Germanium–tin (GeSn) alloys have emerged as a promising platform for infrared (IR) optoelectronics and silicon-compatible photonics, due to their tunable bandgap and potential to achieve a direct bandgap. (1−4) Unlike pure Ge, which has an indirect bandgap, GeSn transitions from an indirect to a direct bandgap, when the Sn content exceeds 6%, depending on strain.
Open in Who Shared Issue with article?

Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge1-xSnx Epilayers Grown by MBE at Different Temperatures

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By Subhashis Das, Nirosh M. Eldose, Hryhorii Stanchu, Ilias Bikmukhametov
| dx.doi.org
Download Hi-Res ImageDownload to MS-PowerPointCite This:Crystal Growth & Design 2023, XXXX, XXX Terms & Conditions Most electronic Supporting Information files are available without a subscription to ACS Web Editions. Such files may be downloaded by article for research use (if there is a public use license linked to the relevant article, that license may permit other uses).
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