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Eytan Barouch on Muck Rack

Eytan Barouch

As seen in: Scientific Research Publishing (SCIRP)
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Articles

Eliminating Residual Non‐Binary Intensities in Pixelated EUV Source Optimization

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By Michael Yeung, Athanasios Batgidis, Eytan Barouch
| Scientific Research Publishing (SCIRP)
1. Introduction Extreme Ultraviolet (EUV) lithography has been the state-of-the-art solution for advanced semiconductor manufacturing, offering sub-7 nm patterning capability. A central challenge in EUV lithography is the design of an optimal illumination source that ensures pattern fidelity, high image log slope (ILS), and minimal edge placement error (EPE). Pixelated source-mask optimization (SMO) offers a high degree of control over illumination profiles.
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