Gencai Pan

J.An, G.Pan, H.Song, and C.Chen, “Lanthanide Ion-Doped Halide Perovskites and Their Optoelectronic Applications.” Laser & Photonics Reviews (2026): e03159. https://doi.org/10.1002/lpor.202503159 1 Introduction Halide perovskites have become a research focus in the field of semiconductor optoelectronic materials in recent years because of their high absorption coefficient, long carrier diffusion length, and high carrier mobility [1-7].

Conflicts of Interest The authors declare no conflicts of interest. Data Availability Statement The data that support the findings of this study are available in the supplementary material of this article. Supporting Information Filename Description lpor70908-sup-0001-SuppMat.pdf4.2 MB Supporting File: lpor70908-sup-0001-SuppMat.pdf.

Conflict of Interest The authors declare no conflict of interest. Supporting Information Filename Description lpor70249-sup-0001-SuppMat.docx20.4 MB Supporting Information References 1, , , , Chem. Soc. Rev. 2023, 52, 8005. 2, , , , , , , , , , , , , , , , Nature 2021, 590, 410. 3, , , , , , , , , , , , , , , , , Light Sci. Appl. 2025, 14, 21. 4, , , , , , , Laser Photonics Rev. 2025, 19, 2500092. 5, , Appl. Phys. Rev. 2024, 11, 041417. 6, , , Adv. Mater. 2021, 33, 2007571. 7, , J. Electrochem. Soc. 1953, 100, 366.